a m s - i r d k 2 5 0 - 0 8 s p e c i f i c a t i o n s s h e e t american microsemiconductor inc. page 1 of 2 1 3 3 k i n g s r o a d , m a d i s o n , n j 0 7 9 4 0 as/en/jisq/ 91 00:2009 rev c and iso 900 1:2008 certificate no: 45325 tel. 973 - 377 - 9566 fax. 973 - 377 - 3078 h t t p : / / w w w . a m e r i c a n m i c r o s e m i c o n d u c t o r . c o m feature ? international standard package ? low forward voltage drop ? isolation voltage 2500v application ? ac/dc machinery control ? rectifying power supply ? frequency converters dc d a d k maximum ratings : symbol parameter test condition rating unit i fav average forward current 180 c =100 250 a i fsm forward surge current t= 10ms,50hz,sin, tjm 11000 a i 2 t i 2 t value v r = 0.6v rrm tjm 617000 a 2 s v iso isolation voltage ac one minute 2500 v tj operating junction temperature - 40 to +150 c tjm rated junction temperature 150 c tstg storage temperature - 40 to +125 c md mountin g torque copper plate m6 4 n t weight 900 g symbol parameter rating unit a m s - i r dc250 - 08 a m s - ir da250 - 08 a m s - i r dk250 - 08 a m s - ir dc250 - 12 a m s - ir da250 - 12 a m s - ir dk250 - 12 a m s - ir dc250 - 14 a m s - ir da250 - 14 a m s - ir dk250 - 14 a m s - ir dc250 - 16 a m s - ir da250 - 16 a m s - ir dk250 - 16 v rrm peak reverse repetitive voltage 800 1200 1400 1600 v v rsm peak reverse non - repet itive voltage 960 1300 1500 1700 v
a m s - i r d k 2 5 0 - 0 8 s p e c i f i c a t i o n s s h e e t american microsemiconductor inc. page 2 of 2 1 3 3 k i n g s r o a d , m a d i s o n , n j 0 7 9 4 0 as/en/jisq/ 91 00:2009 rev c and iso 900 1:2008 certificate no: 45325 tel. 973 - 377 - 9566 fax. 973 - 377 - 3078 h t t p : / / w w w . a m e r i c a n m i c r o s e m i c o n d u c t o r . c o m electrical characteristic s : symbol parameter test condition rating unit i rrm peak off - state repetitive current v d = v drm , sine half wave , tj m 20 ma v fm peak forward vol tage i fm =1000a, tj=25 c 1.4 v rth(j - c) thermal resistance junction - case single - side heat dissipation, sine half wave 0.14 c/w on - state surge current (ka) on - state peak voltage (v) transient thermal impedance (junction - case) time (s) on - state surge current vs cycles cycles @50hz i 2 t (10 3 a 2 s) i 2 t characteristic time (ms) transient ther mal impedance (
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